Pressure Coefficient of the Band Gap in Mg2Si, Mg2Ge, and Mg2Sn
作者： A. Stella , A. D. Brothers , R. H. Hopkins , D. W. Lynch
关键词: Band gap 、 Chemistry 、 Conduction band 、 Symmetry (physics) 、 Condensed matter physics 、 Electrical resistivity and conductivity 、 Edge (geometry) 、 Pressure coefficient 、 Valence band 、 Pressure derivative 、 Electronic, Optical and Magnetic Materials
摘要: The pressure deri vative of the band gap, (∂E/∂P)T, has been determined to be + 3 × 10−6 e Vbar−1 for Mg2Sn by measurements derivative electrical conductivity. Similar on Mg2Si and Mg2Ge were inconclusive, but estimates this parameter made from shift optical obsorption edge with pressure. (∂E/∂P)T = (0 ± 0.5) both compounds. similarity coefficients suggests that symmetries edges compounds are similar, while either conduction edge, valence or in may have a different symmetry.
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