Low noise avalanche photodiodes by channeling of 800‐keV boron into 〈110〉 silicon
作者： Takao Kaneda , Shuzo Kagawa , Toyoshi Yamaoka , Hidetoshi Nishi , Tsuguo Inada
DOI: 10.1063/1.324524
关键词: Materials science 、 Silicon 、 Atomic physics 、 Photodiode 、 Noise (radio) 、 Wafer 、 Avalanche photodiode 、 Boron 、 Diode 、 Ion implantation
摘要: Low noise avalanche photodiodes, which have an n+‐p‐π‐p+ structure, are reported. Channeled boron ions (800 keV) in the 〈110〉 of Si used for forming p layer. The characteristics this diode compared with those fabricated by 800‐keV random implantation. excess factors F=4–5 at a gain 100 obtained using channeled implantation, whereas F=6–7 By parallel uniformity distributions found to be fairly good different locations wafer.
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