Silicon avalanche photodiode with low multiplication noise
作者： Robert J. McIntyre
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摘要: There is provided an n+ -p-π-p+ APD having a shallow and abrupt p-n junction located about 1 to 2 μm into the p-type conductivity region containing acceptors in uncompensated excess concentration corresponding dose of between 5 10×1011 acceptors/cm2. The combination doping profile gives rise electric field multiplication spread substantially throughout entire thickness central active no drift region. peaks adjacent value 2.9×105 volts/cm. diminishes over distance that extends but remains at 1.6×105 volts/cm maintain APD. extending through can be achieved with acceptable increase operating voltage has less than 40 μm.
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