Solid state imager and its driving method

摘要: A very high sensitive solid state imager is realized by employing a multiplication process which includes avalanche of charges as generated an incident light at each several optical to electrical converting components (hereafter referred photosite). Thus, the functions speed electron shutter are obtained. Notwithstanding sensitivity, reduced supply voltage for can be laminating transparent electrode poly-silicon or ITO on photosite, applying thereupon through its capacity coupling, and simultaneously negative read-out gate during readout time. Furthermore, also ITO, polarity opposite that applied