Planar guarded avalanche diodes in InP fabricated by ion implantation
作者： J. P. Donnelly , C. A. Armiento , V. Diadiuk , S. H. Groves
DOI: 10.1063/1.90937
关键词:
摘要: Planar guarded avalanche diodes in InP have been fabricated using a double‐ion‐implantation technique. Silicon was selectively implanted into an n‐type epitaxial layer to increase the concentration portion of diode, and beryllium form p‐n junction. When appropriately reverse biased, these exhibited uniform photocurrent gain central portion, where electric field is maximum. With 1‐kΩ load, photoresponse gains as high 20 were measured, although values 6 8 more typical. At present, external with fixed load limited by shunting effect diode’s differential resistance.
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