p‐njunction diodes in InP and In1−xGaxAsyP1−yfabricated by beryllium‐ion implantation
作者： C. A. Armiento , J. P. Donnelly , S. H. Groves
DOI: 10.1063/1.90740
关键词:
摘要: Mesa and planar InP p‐n junction diodes have been fabricated by beryllium‐ion implantation. These devices exhibit abrupt reverse‐bias breakdowns low leakage currents. Similar mesa produced in In1−xGaxAsyP1−y (Eg≈1.0 eV). Diodes operated the punch‐through mode exhibited uniform breakdown over area of device, without any apparent edge effects.
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