Multiplication noise of InP avalanche photodiodes
作者： T. Shirai , F. Osaka , S. Yamasaki , T. Kaneda , N. Susa
DOI: 10.1063/1.92650
关键词:
摘要: An InP avalanche photodiode with a guard ring structure is fabricated. The maximum gain obtained 210 at primary photocurrent of 0.2 μA, and uniform photoresponse without local enlargement an 10. Multiplication noise characteristics are investigated, the effective ionization rate ratio holes to electrons found be 1.7–1.8.
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