Si‐implanted n+‐InP/p‐InP junctions: Electrical characterization and noise
作者： A. L. Conjeaud , B. Orsal , A. Dhouib , R. Alabedra , L. Gouskov
DOI: 10.1063/1.336435
关键词:
摘要: This paper describes the various types of reverse conduction in a n+, Si‐implanted InP/p‐InP junction and behaviors I‐V characteristics noise different polarization ranges corresponding to generation‐recombination, tunneling assisted by traps, multiplication. An increase trap density tunnel current with increasing dose implanted ions was observed.
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