Charge accumulation and multiplication photodetector

摘要: A charge accumulation and multiplication photodetector has a unit cell composed of three gates formed on substrate. The first gate serves as integrator. second transfer control the third an avalanche gate. In operation is closed in response to photon flux accumulated After integration time period collect charge, biased into ready state then enabled allowing for rapid integrated from accumulator displacement current induced across utilized signal output device. Gain achieved device avalanching by transferring substantially less than yield gain process.