Solid-state image sensing device containing electron multiplication function

摘要: Disclosed is a solid-state image sensing device containing an electron multiplication function. In cross section perpendicular to transfer direction in register (EM), insulation layer (2) has center area, the thickness of which larger than thicknesses opposed side portions layer; and pair overflow drains (1N) are formed boundaries between area N-type semiconductor (1C), each drain extends (EM). Overflow gate electrodes (G) extend from thin portion thick (2), provided ends electrode (8A, 8B) longitudinal thereof, function as shield for 8B).