Avalanche photodiode and method of making same

摘要: The invention is an improved avalanche photodiode having higher sensitivity at short wavelengths and a method of making it. improvement comprises contacting layer varying thickness which can have thin portion through light enters the thicker surrounding to electrical contact be made. This structure exhibits substantially greater less than 500 nanometers without affecting long wavelength sensitivity. also forming where thinner portions are sequentially formed using two-step diffusion process.