Devices for detecting and/or imaging single photoelectron
作者： Gerald C. Huth
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摘要: A wafer of neutron transmutation doped silicon having a p-n junction between extended opposite surfaces is formed with bevelled edges. single or plurality reverse biased signal contacts disposed on one surface to provide integrated array avalanche photodiodes. In addition, an photodetector (APD) capable detecting photoelectron imaging multiple photoelectrons comprises light sensitive photocathode, similar that in photomultiplier tube, acting as converter produce photoelectrons, which are then accelerated anode. The anode photodiode (AP) for (APA) photoelectrons. energetic striking the AP APA serve APA's input signal, respectively.
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