Silicon photoelectric multiplier having cell structure
作者： Koung Soo Kwon , Chae Dong Go , Sung yong An
DOI:
关键词:
摘要: Disclosed is a silicon photoelectric multiplier having cell structure, which includes first type substrate; plurality of cells including epitaxial layer formed on the substrate, high concentration conductive layer, and second doped with opposite layer; trench to optically separate cells; guard ring an outer wall so as reach bottom surface thus further increasing degree optical separation thereby increase light detection efficiency.
lens.org 参考文章(10)
Gary G Slaten, Edward H Snow, Surface depletion layer photodevice ,(1969)
Gerald C. Huth, Devices for detecting and/or imaging single photoelectron ,(1990)
Takashi Kurooka, Tetsuya Kiyonaga, Akimitsu Miyazaki, Hisaya Sakamoto, Nobuaki Sato, APD bias circuit ,(2000)
Masahiro Teshima, Sergey Nikolaevich Klemin, Leonid Anatolievich Filatov, Elena Viktorovna Popova, Razmik Mirzoyan, Boris Anatolievich Dolgoshein, Silicon photoelectric multiplier (variants) and a cell for silicon photoelectric multiplier ,(2005)
James C. North, David P. Schinke, Edge illuminated photodetector with optical fiber alignment ,(1979)
Franco Zappa, Massimo Ghioni, Sergio Cova, Robert Grub, Eberhard Derndinger, Thomas Hartmann, Ultrasensitive photodetector with integrated pinhole for confocal microscopes ,(2001)
Angel Eduardo Sanchez, Juan Baltazar Conchas, Apparatus for optical communication using a large-area primary reflector ,(2004)
Jean Louis Digoy, Semiconductor radiation detector and method of manufacturing same ,(1973)
Masakatsu Hoshi, Yukitsugu Hirota, Teruyoshi Mihara, Kenji Yao, Tsutomu Matsushita, Yutaka Enokido, Semiconductor device with high surge endurance ,(1991)
Endo Nobuhiro, Hamaguchi Tsuneo, Semiconductor device and method of manufacturing the same ,(1989)