Method for preventing crack extensions during lift-off process
作者： Chen Li-Yi
DOI:
关键词: Guard (information security) 、 Epitaxy 、 Lift (force) 、 Wafer 、 Composite material 、 Materials science 、 Trench
摘要: A method for preventing crack extensions during a lift-off process is provided. The includes forming an epitaxial layer on wafer substrate; guard trench in the layer, wherein depth of thickness direction at least half and total length greater than quarter circumference layer; performing to separate substrate from layer.
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