Lateral single-photon avalanche diode and method of producing a lateral single-photon avalanche diode
作者： Frederic Roger , Jordi Teva
DOI:
关键词: PIN diode 、 Depletion region 、 p–n junction 、 Single-photon avalanche diode 、 Doping 、 Avalanche diode 、 Cathode 、 Materials science 、 Optoelectronics 、 Layer (electronics)
摘要: A lateral single-photon avalanche diode comprises a semiconductor body (1) of first type conductivity which includes base layer (10), further (11) on the and second (12) layer. The have an intrinsic doping or concentration that is lower than Thereby, high electric field region essentially confined to (11). doped (5) opposite arranged in body, penetrates extends into Anode cathode terminals (3, 4) are electrically connected region, respectively. can be produced by filling trench (19) with polysilicon.
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