Single-photon avalanche diode

作者: Mineki Soga , Cristiano Niclass

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摘要: A first semiconductor layer serves as a implanted of conductivity type. second type is provided under the layer. The opposite to buried in an epitaxial grown above substrate. becomes fully depleted when appropriate bias voltage applied device.

参考文章(4)
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J. C. Carrano, D. J. H. Lambert, C. J. Eiting, C. J. Collins, T. Li, S. Wang, B. Yang, A. L. Beck, R. D. Dupuis, J. C. Campbell, GaN avalanche photodiodes Applied Physics Letters. ,vol. 76, pp. 924- 926 ,(2000) , 10.1063/1.125631
Mineki Soga, Michinori Ando, 晃太 伊藤, Kota Ito, Cristiano Niclass, 峰樹 曽我, クリスチアーノ ニクラス, 道則 安藤, Photodiode and photodiode array ,(2011)