Trench mos structure and method for making the same
作者： Chin-Te Kuo , Hsien-Wen Liu , Yi-Nan Chen
DOI:
关键词:
摘要: A trench MOS structure is provided. The includes a substrate, an epitaxial layer, trench, gate isolation, gate, guard ring and reinforcement within the ring. substrate has first conductivity type, side second opposite to side. layer type disposed on in layer. isolation covers inner wall of trench. type. electrically insulating material
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