SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD FOR SAME
作者： Iwasaki Shinya
DOI:
关键词:
摘要: This semiconductor device includes: a substrate provided with drift layer of first conductivity type, body second type to the top surface side layer, and part layer; trench gate extending from so as run through reach layer. The is insulation film formed on inner wall trench, electrode disposed film. located at depth enabling contact substrate, (100) crystal substrate. Regarding width in short direction orthogonal long narrower than spanning lower end
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