Semiconductor device and method of manufacturing the same
作者： Endo Nobuhiro , Hamaguchi Tsuneo
DOI:
关键词: Materials science 、 Electrode 、 Semiconductor 、 Optoelectronics 、 Electrical conductor 、 Semiconductor device
摘要: PROBLEM TO BE SOLVED: To provide a semiconductor device which can take sufficient number of bumps with low cost and small size, also to method for manufacturing the device. SOLUTION: The includes element 1 having plurality electrodes 1a, resin film 3 joined on its one surface formed therein through-holes 4 at positions corresponding conductors 5 as extended from other onto 3, bump 6 joining 1a via 4, 7 respective 3.
lens.org 参考文章(5)
Junichi Ohno, Takao Ohta, Method of fabricating MOS device on a SOS wafer by stabilizing interface region with silicon and oxygen implant ,(1984)
Madhukar B. Vora, Bipolar memory cell ,(1983)
J.B. Lasky, S.R. Stiffler, F.R. White, J.R. Abernathey, Silicon-on-insulator (SOI) by bonding and ETCH-back international electron devices meeting. ,vol. 31, pp. 684- 687 ,(1985) , 10.1109/IEDM.1985.191067
Greg L. Kuhn, John Rhee, Thin Silicon Film on Insulating Substrate Journal of The Electrochemical Society. ,vol. 120, pp. 1563- 1566 ,(1973) , 10.1149/1.2403303