Large area avalanche photodiode array
作者： Andrzej J. Dabrowski
DOI:
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摘要: A large area avalanche photodiode device that has a plurality of contacts formed on bottom side are isolated from each other by various kinds isolation structures. In one embodiment, cavity is in layer the extends to depletion region exists as result voltage applied device. The so positioned substantially adjacent region. another and an structure comprised grid semiconductor material be interposed between contacts. preferably forms p-n junction with surrounding provides Preferably, inner surface distal boundary region, however, into electrically combination high resistivity layer.
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