Inverted planar avalanche photodiode
作者： Michael T. Morse , Alexandre Pauchard
DOI:
关键词: Avalanche photodiode 、 Optoelectronics 、 Materials science 、 Electric field 、 Layer (electronics) 、 Charge carrier 、 Absorption (electromagnetic radiation) 、 Photodetector 、 Planar 、 Doping 、 Optics
摘要: An avalanche photodetector is disclosed. apparatus according to aspects of the present invention includes a semiconductor substrate layer including first type material. The also multiplication material disposed proximate layer. an absorption having second such that between and optically coupled receive absorb optical beam. n+ doped region defined at surface opposite A high electric field generated in multiply charge carriers photo-generated response beam received
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