Low-noise, reach-through, avalanche photodiodes

摘要: A new reach-through APD structure which includes a five-layer, double-drift-region, double-junction device, having p+ -p-n-p- -n+ structure. The middle three layers of the constitute most thickness device and are fully depleted when is biased to its normal operating voltage. In present invention, only primary carriers generated in relatively narrow first drift region subject full avalanche gain, resulting dark current noise levels much lower than conventional APD's. can be used fabricate integrated arrays These more durable easily fabricated prior art Additionally, array does not require segmentation or isolation multiplying regions different elements array, allowing made with little no dead space between elements.