Erase and programming techniques to reduce the widening of state distributions in non-volatile memories

摘要: Techniques are presented for use in memory devices to improve reliability and endurance by reducing the widening state distributions, that occurs after multiple write/erase cycles. One set of techniques uses a pre-conditioning operation where pulse series, which may include program gentle erase, applied one or more wordlines while voltage differential is wordline direction, bitline both. Another dual multi-pulse process, an increased wordline-to-wordline used first pair.