Non-volatile memory with multi-word line select for defect detection operations

摘要: A stress mode for use in testing non-volatile memory arrays a number of types defects is described. More specifically, multi-word line select option given block can be used group selected word lines to set the programming or other high voltage, while unselected are pass voltage minimize electric field differences order avoid disturb. For example, could 4, 8 16. The applied one per plane, so that if there two planes, such blocks simultaneously those blocks.