Tunnel MIS solar cells

摘要: In a recent publication we have proposed an explanation for the operation of Schottky‐barrier solar cells with interfacial oxide layer based on concept that they are minority‐carrier nonequilibrium MIS tunnel diodes. Such devices represent potentially low‐cost method fabricating large‐scale solar‐energy‐conversion arrays both single crystals and polycrystalline film semiconductors. These identical to conventional p–n junction device except location depletion region. Our calculations indicate one would grow defect‐free ultra‐thin (10–15 A in case Al–SiO2–Si structure) layers get highest conversion efficiencies from these devices. Performance will be described main emphasis role surface states charges.