Role of ion beam heating in blistering behaviour of solids

摘要: Abstract Evolution of subsurface damage microstructures such as bubbles, dislocations and microcracks during gaseous ion implantation decreases the thermal conductivity implant/damage region by decreasing mean free path heat carriers, electrons phonons, due to enhanced scattering. Consequently dissipation beam power dumped into implanted surface layer is interrupted, which results in increased effective temperature. The solution steady-state conduction equations corresponding experiments presented give spot A comparison with experimental observations like sudden rise temperature at moment blistering, red glow blister covers sponge-like skins provides an estimation near critical dose for blistering. It was found that 4 6 orders magnitude from its bulk value. role ion-induced rise...