Role of integrated lateral stress in surface deformation of He‐implanted surfaces

摘要: The first measurements of integrated lateral stress S have been obtained for He implantations to fluences where surface deformation occurs. Implants into Mo, Nb, and Al were carried out at room temperature. low‐fluence results provide values the induced volume expansion per implanted atom. high‐fluence demonstrate that blistering, as observed in Mo is directly related relief S. However, flaking, Al, does not result appreciable saturation value stress, Smax, proportional yield three materials independent projected range. A model describe blistering phenomenon developed based on standard elastic stability equation a plate subjected in‐plane forces. This instability uses only measurable material parameters depend explicitly behavior material. explains τ∝d2/3 relation blister diameter d...