Defects and their Electronic Properties in High-Pressure-Annealed SOI Structures Sliced by Hydrogen
作者： V. P. Popov , A. K. Gutakovskii , L. N. Safronov , I. E. Tyschenko , S. K. Zhuravlev
DOI: 10.1007/978-94-010-0339-1_21
关键词:
摘要: In the fundamental phenomenon of blistering observed during implantation gas ions into silicon, there remains a long-standing controversy concerning mechanism decay over-saturated solid solution atoms and intrinsic point defects. The interest to this has been drastically renewed in recent years due its practical significance since adds toolbox SOI technology useful method known as “Smart Cut” [1].
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