Strain in hydrogen and oxygen implanted silicon and SOI structures annealed at high pressure
作者： J. Bak-Misiuk , I.V. Antonova , A. Misiuk , J. Domagala , V.P. Popov
DOI: 10.1016/S0925-8388(01)01344-5
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摘要: Abstract Effect of annealing up to 1400 K under argon pressure 1.2 GPa (HT-HP treatment) on silicon implanted with hydrogen (Si:H), oxygen (Si:O) and silicon-on-insulator (SOI) structure was investigated by X-ray methods transmission electron microscopy (TEM). The results obtained for the HT-HP treated samples were compared that annealed at atmospheric (10 5 Pa). For Si:H Si:O treatment influences strain state Si top layer much stronger than pressure. prohibits diffusion towards surface region. as-bonded SOI structures indicated presence defects. mosaic-like high defect concentration observed also 1370 K–1.2 GPa, while 10 Pa resulted in improved perfection layer.
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