Formation of nanocrystalline silicon films using high-dose H+ ion implantation into silicon-on-insulator layers with subsequent rapid thermal annealing

作者: I. E. Tyschenko , V. P. Popov , A. B. Talochkin , A. K. Gutakovskii , K. S. Zhuravlev

DOI: 10.1134/1.1641141

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摘要: The formation of nanocrystalline Si films as a result rapid thermal annealing silicon-on-insulator structures implanted with high doses H+ ions is studied. It ascertained that the process nanocrystals active even at temperatures 300–400°C and controlled by hydrogen content in silicon film duration annealing. concluded nuclei crystalline phase occurs islands surrounded microvoids caused ordering Si-Si bonds course release from bound state. important do not coalesce up to ∼900°C conditions found synthesized exhibit luminescence green-orange region spectrum room temperature.

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