Raman and photoluminescence investigations of the H+ ion implanted silicon-on-insulator structure formed by hydrogen ion cut
作者： I.E Tyschenko , A.B Talochkin , B.A Kolesov , K.S Zhuravlev , V.I Obodnikov
DOI: 10.1016/S0168-583X(01)00865-5
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摘要: Abstract H+ ion implanted SOI structures formed by hydrogen cut have been investigated SIMS, Raman spectroscopy and photoluminescence (PL). After implantation the wafers heat-treated either furnace annealing or rapid thermal annealing. It has found that of 1×1017 to 3×10 17 H + / cm 2 results in formation amorphous Si layer (a-Si) inside silicon film on insulator. Structural transformations a-Si depended conditions. Furnace (FA) led crystallization monocrystalline films. Rapid (RTA) layers containing a high density nanocrystals. A comparison measurements with PL data allows us conclude bands obtained near 420 500 nm are not associated radiative recombination
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