Thermodynamic model of hydrogen-induced silicon surface layer cleavage
作者： Weihua Han , Jinzhong Yu
DOI: 10.1063/1.1370109
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摘要: A thermodynamic model of hydrogen-induced silicon surface layer splitting with the help a bonded wafer is proposed in this article. Wafer result lateral growth hydrogen blisters entire hydrogen-implanted region during annealing. The blister rate depends on effective activation energies both complex dissociation and diffusion. radius was studied as function annealing time, temperature, implantation dose. critical obtained according to Griffith energy condition. time required for at cut temperature calculated accordance blisters.
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