Сavity Effect in Hydrogen Ion Implanted Silicon-On-Insulator Structures
作者： Ida E. Tyschenko , K.S. Zhuravlev , A.G. Cherkov , Andrzej Misiuk , V.P. Popov
DOI: 10.4028/WWW.SCIENTIFIC.NET/SSP.108-109.477
关键词:
摘要: Cavity effect on the room-temperature (RT) photoluminescence (PL) from emitting centers in top silicon layer of silicon-on-insulator (SOI) structure has been studied. The lightemitting were produced by implantation H+ ions and subsequent annealing at temperatures Ta = 450-1000 oC for 5 h an Ar ambient under pressure P 1 - 1.2×104 bar. It obtained that hydrostatic higher than 6 kbar prevented outdiffusion hydrogen form gas bubbles, which took place after Ta≥600 atmospheric conditions. Absence micro-pores bubbles surface region creates conditions to retain mirror quality SOI/air interface. A wavelength-selective formed cavity visible PL observed ion implanted SOI structures annealed 12 kbar. enhancement emission 23-40 times found wavelength 515 560 nm.
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