In situ cleaning of silicon substrate surfaces by remote plasma-excited hydrogen

摘要: We have demonstrated a low‐temperature cleaning technique for removing both carbon and oxygen from Si surface. It uses combination of ex situ wet chemical clean an in remote rf plasma‐excited hydrogen ultrahigh vacuum chamber. Since plasma is used, there insignificant damage or other deleterious effects on surface morphology. A Auger RHEED analysis has been used to confirm the removal contaminants reconstruction From mass spectroscopy studies, we believe that due etching by atomic produced plasma. This compatible with UHV processing yields substrates can be successful very low temperature (220–400 °C) homoepitaxy plasma‐enhanced vapor deposition.