PL of low-density InAs/GaAs quantum dots with different bimodal populations
作者： Ying Wang , Xinzhi Sheng , Yao Liu , Baolai Liang , Xiaoli Li
关键词: Layer (electronics) 、 Pl quenching 、 Gallium arsenide 、 Monolayer 、 Optoelectronics 、 Photoluminescence 、 Quantum dot 、 Population 、 Materials science 、 Indium arsenide
摘要: Optical response of the indium arsenide (InAs)/gallium (GaAs) quantum dots (QDs) with a bimodal distribution is investigated through varying an initial GaAs capping layer between 35 and 18 monolayers. Photoluminescence (PL) measurements confirm that thinner can reduce QD dimensions also modify population ratio large QDs small QDs. Therefore, PL quenching related to dimension carrier transfer populations has been affected. Manipulation provides feasible approach tailor formation optical performance InAs for optoelectronic device applications.
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