Hybrid Type-I InAs/GaAs and Type-II GaSb/GaAs Quantum Dot Structure with Enhanced Photoluminescence
作者： Hai-Ming Ji , Baolai Liang , Paul J Simmonds , Bor-Chau Juang , Tao Yang
DOI: 10.1063/1.4914895
关键词:
摘要: We investigate the photoluminescence (PL) properties of a hybrid type-I InAs/GaAs and type-II GaSb/GaAs quantum dot (QD) structure grown in GaAs matrix by molecular beam epitaxy. This QD exhibits more intense PL with broader spectral range, compared control samples that contain only InAs or GaSb QDs. enhanced performance is attributed to additional electron hole injection from QDs into adjacent confirm this mechanism using time-resolved power-dependent PL. These structures show potential for high efficiency solar cell applications.
scitation.org
core.ac.uk
harvard.edu
osti.gov
irgrid.ac.cn
aip.org 参考文章(22)
D Bimberg, M Grundmann, D, NN Ledentsov, Quantum dot heterostructures ,(1999)
Wolfgang Becker, Advanced Time-Correlated Single Photon Counting Techniques ,(2005)
Yong-Xian Gu, Xiao-Guang Yang, Hai-Ming Ji, Peng-Fei Xu, Tao Yang, Theoretical study of the effects of InAs/GaAs quantum dot layer’s position in i-region on current-voltage characteristic in intermediate band solar cells Applied Physics Letters. ,vol. 101, pp. 081118- ,(2012) , 10.1063/1.4748161
F. Hatami, M. Grundmann, N. N. Ledentsov, F. Heinrichsdorff, R. Heitz, J. Böhrer, D. Bimberg, S. S. Ruvimov, P. Werner, V. M. Ustinov, P. S. Kop’ev, Zh. I. Alferov, Carrier dynamics in type-II GaSb/GaAs quantum dots Physical Review B. ,vol. 57, pp. 4635- 4641 ,(1998) , 10.1103/PHYSREVB.57.4635
Feng Xu, Xiao-Guang Yang, Shuai Luo, Zun-Ren Lv, Tao Yang, Enhanced performance of quantum dot solar cells based on type II quantum dots Journal of Applied Physics. ,vol. 116, pp. 133102- ,(2014) , 10.1063/1.4895476
Kimberly A. Sablon, John W. Little, Vladimir Mitin, Andrei Sergeev, Nizami Vagidov, Kitt Reinhardt, Strong Enhancement of Solar Cell Efficiency Due to Quantum Dots with Built-In Charge Nano Letters. ,vol. 11, pp. 2311- 2317 ,(2011) , 10.1021/NL200543V
E. R. Glaser, B. R. Bennett, B. V. Shanabrook, R. Magno, Photoluminescence studies of self‐assembled InSb, GaSb, and AlSb quantum dot heterostructures Applied Physics Letters. ,vol. 68, pp. 3614- 3616 ,(1996) , 10.1063/1.115747
L. Ya. Karachinsky, S. Pellegrini, G. S. Buller, A. S. Shkolnik, N. Yu. Gordeev, V. P. Evtikhiev, V. B. Novikov, Time-resolved photoluminescence measurements of InAs self-assembled quantum dots grown on misorientated substrates Applied Physics Letters. ,vol. 84, pp. 7- 9 ,(2004) , 10.1063/1.1637962
R. B. Laghumavarapu, A. Moscho, A. Khoshakhlagh, M. El-Emawy, L. F. Lester, D. L. Huffaker, GaSb∕GaAs type II quantum dot solar cells for enhanced infrared spectral response Applied Physics Letters. ,vol. 90, pp. 173125- ,(2007) , 10.1063/1.2734492
A. Luque, A. Martí, N. López, E. Antolín, E. Cánovas, C. Stanley, C. Farmer, L. J. Caballero, L. Cuadra, J. L. Balenzategui, Experimental analysis of the quasi-Fermi level split in quantum dot intermediate-band solar cells Applied Physics Letters. ,vol. 87, pp. 083505- ,(2005) , 10.1063/1.2034090