Type-I to Type-II Transformation of Hybrid Quantum Nanostructures
作者： Hsuan-An Chen , Wei-Hsun Lin , Chiao-Yun Chang , Shu-Wei Chang , Min-Hsiung Shih
DOI: 10.1109/JSTQE.2016.2629085
关键词:
摘要: Hybrid nanostructures of type-I InAs quantum dots (QDs) and type-II GaSb rings (QRs) separated by a GaAs spacer layer is experimentally demonstrated in this paper. As the thickness decreases, dot density increases with reduced height, indicating that smaller QDs tend to grow atop along rims QRs. With thin 2 nm, photoluminescence hybrid at room temperature redshifted 1.4 μm remains bright temperature. This phenomenon suggests electrons holes QRs recombine radiatively high efficiencies as two are nearby. The longer carrier lifetime also observed from which keep farther, confirming nature transitions these nanostructures.
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