Controlled optical properties of GaSb/InGaAs type-II quantum dots grown on InP substrate
作者： S. H. Zhang , L. Wang , Z. W. Shi , H. T. Tian , H. J. Gao
DOI: 10.1063/1.4729939
关键词:
摘要: Effect of GaSb/InGaAs quantum dots (QDs) morphology and In composition in InGaAs interlayer on the optical properties QD material system was studied this work. The interband transition GaSb type-II from conduction band to hole level were observed. It found that both had an influence system. Note linear relationship exists between photoluminescence peak positions, which indicates structural characteristics matrix can be used as important tool adjust This experimental result shows more precisely controlled than widely GaSb/GaAs
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