Dielectric properties in thin film SrTiO/sub 3/ capacitor
作者： H. Ouajji , A. Sylvestre , E. Defay , K. Raouadi , F. Jomni
DOI: 10.1109/EPTC.2005.1614497
关键词: Dissipation factor 、 Analytical chemistry 、 Dielectric loss 、 Relative permittivity 、 Relaxation (physics) 、 Permittivity 、 Space charge 、 Materials science 、 Dielectric spectroscopy 、 Condensed matter physics 、 Dielectric
摘要: The dielectric behavior of Pt/SrTiO3/Pt thin films is reported in this paper. STO (20 nm and 50 nm) were deposited by ion-beam-sputtering (IBS). This study was carried out the temperature ranging from 25degC to 150degC for frequencies range 0.01 Hz-1 MHz. Results showed that permittivity depends strongly on frequency, sample thickness. For latter, constant decreases as film thickness decreased. can be explained an interfacial "dead layer effect" reduces effective constant. Using approximative calculations based dependence constant, we have estimated 'dead layer'. a given thickness, when frequency decreased, observe increase permittivity. more pronounced increases with nm. A relaxation peak loss tangent same confirms process. We suggest relaxations at grain boundaries explain relaxation. differs function thickness: temperature, located higher less important thinner film. explains tandelta An ionic space charge movement blocking accumulation ions electrodes could responses (permittivity losses) lowest frequencies. To conclude, low spectroscopy appears essential tool understand optimize high integrated MIM capacitances
sci-hub.se 参考文章(12)
B. Chen, H. Yang, L. Zhao, J. Miao, B. Xu, X. G. Qiu, B. R. Zhao, X. Y. Qi, X. F. Duan, Thickness and dielectric constant of dead layer in Pt/(Ba0.7Sr0.3)TiO3/YBa2Cu3O7-x capacitor Applied Physics Letters. ,vol. 84, pp. 583- 585 ,(2004) , 10.1063/1.1644342
Hong-Cheng Li, Weidong Si, Alexander D West, XX Xi, None, Near single crystal-level dielectric loss and nonlinearity in pulsed laser deposited SrTiO3 thin films Applied Physics Letters. ,vol. 73, pp. 190- 192 ,(1998) , 10.1063/1.121751
Julie Guillan, Gérard Tartavel, Emmanuel Defaÿ, Laurent Ulmer, Ludivine Galéra, Bernard André, Françoise Baume, Optimisation of Surface Capacitance and Leakage Currents on Ion Beam Sputtered SrTiO3-Based MIM Capacitors for Above IC Technology Integrated Ferroelectrics. ,vol. 67, pp. 93- 101 ,(2004) , 10.1080/10584580490898560
A. A. Sirenko, I. A. Akimov, J. R. Fox, A. M. Clark, Hong-Cheng Li, Weidong Si, X. X. Xi, OBSERVATION OF THE FIRST-ORDER RAMAN SCATTERING IN SRTIO3 THIN FILMS Physical Review Letters. ,vol. 82, pp. 4500- 4503 ,(1999) , 10.1103/PHYSREVLETT.82.4500
S. Hyun, K. Char, Effects of strain on the dielectric properties of tunable dielectric SrTiO3 thin films Applied Physics Letters. ,vol. 79, pp. 254- 256 ,(2001) , 10.1063/1.1384893
C. Zhou, D. M. Newns, Intrinsic dead layer effect and the performance of ferroelectric thin film capacitors Journal of Applied Physics. ,vol. 82, pp. 3081- 3088 ,(1997) , 10.1063/1.366147
Hong-Cheng Li, Weidong Si, Alexander D West, XX Xi, None, Thickness dependence of dielectric loss in SrTiO3 thin films Applied Physics Letters. ,vol. 73, pp. 464- 466 ,(1998) , 10.1063/1.121901
Kenji Natori, Daijiro Otani, Nobuyuki Sano, Thickness dependence of the effective dielectric constant in a thin film capacitor Applied Physics Letters. ,vol. 73, pp. 632- 634 ,(1998) , 10.1063/1.121930
AR James, XX Xi, None, Effects of buffer layer thickness and strain on the dielectric properties of epitaxial SrTiO3 thin films Journal of Applied Physics. ,vol. 92, pp. 6149- 6152 ,(2002) , 10.1063/1.1515100
Cem Basceri, S. K. Streiffer, Angus I. Kingon, R. Waser, The dielectric response as a function of temperature and film thickness of fiber-textured (Ba,Sr)TiO3 thin films grown by chemical vapor deposition Journal of Applied Physics. ,vol. 82, pp. 2497- 2504 ,(1997) , 10.1063/1.366062