Homodyne Detection of Free Carrier Induced Electro-Optic Modulation in Strained Silicon Resonators

摘要: In the last few years, strained silicon has been proposed as a potential electro-optic material, paving way to realization of ultrafast modulators which are compatible with CMOS fabrication technology. The linear Pockels effect used for measuring magnitude induced $\chi ^{(2)}$ components, values reaching hundreds $\text{pm/V}$ . Recently, it shown that these could have overestimated due contribution free carriers modulation. this work, hypothesis is validated by series experimental observations, performed on racetrack resonators. These fabricated different waveguide widths and orientations. We use low frequency (KHz) homodyne detection technique monitor response devices. results indicate modulation strength not dependent geometry or direction. A lot anomalies encountered in device response, mechanism origin. To purporse, theory based nonlinear injection inside presented. This able account all observed anomalies.