Circular stacking faults in silicon
作者： W. K. Tice , T. C. Huang
DOI: 10.1063/1.1655133
关键词: Mineralogy 、 Silicon 、 Condensed matter physics 、 Stacking 、 Dislocation 、 Diffraction 、 Electron microscopic 、 Materials science 、 Climb 、 Fault (geology)
摘要: An electron microscopic diffraction study for circular stacking faults in silicon has been carried out. For the first time it possible to make direct correlation between and subsurface precipitates, confirm that fault growth involves climb of a Frank dislocation from precipitate site.
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