Nucleation and growth of stacking faults in epitaxial silicon during thermal oxidation
作者： C. M. Hsieh , D. M. Maher
DOI: 10.1063/1.1662344
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摘要: An optical and electron microscopy study of the nucleation growth stacking faults in {001}‐oriented epitaxial silicon has been carried out following pretreatment crystal hydrofluoric acid thermal oxidation steam at 1050°C. A direct correlation etched surface structure as revealed by interference contrast scanning with substructural defects transmission established for times ≥1 min. The observations are divided into five stages which, taking TEM a reference, (i) formation needle‐shaped precipitate Si–SiO2 interface; (ii) an interfacial Frank dislocation; (iii) climb dislocation substrate; (iv) equilibrium‐shaped fault; (v) stacking‐fault interactions.
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