The influence of oxidation-sirtl etch condition on the stacking fault generation in (111) silicon wafers
作者： Y. Sugita , T. Aoshima , K. Yoneda , A. Yoshinaka
DOI: 10.1007/BF02657843
关键词:
摘要: The successive oxidation-Sirtl etch technique has been investigated to evaluate the perfection of silicon crystals by detecting extrinsic stacking faults produced during oxidation. Experiments were performed in (111) epitaxial wafers. Measured densities found epend on conditions thermal oxidation, and fault a maximum at an oxidation temperature around 1100°C. reduced appreciably when wafers chemically etched remove several tens microns prior test. generation is thought occur heterogeneous nucleation due very small amount unidentified impurity crystals.
springer.com
harvard.edu
sci-hub.se 参考文章(15)
Alan Cottrell, An introduction to metallurgy ,(1967)
R. J. Jaccodine, C. M. Drum, EXTRINSIC STACKING FAULTS IN SILICON AFTER HEATING IN WET OXYGEN Applied Physics Letters. ,vol. 8, pp. 29- 30 ,(1966) , 10.1063/1.1754414
S. Prussin, Generation of Stacking Faults and Dislocation Loops in Silicon Wafers Journal of Applied Physics. ,vol. 43, pp. 733- 735 ,(1972) , 10.1063/1.1661189
H. J. Queisser, P. G. G. Van Loon, Growth of Lattice Defects in Silicon during Oxidation Journal of Applied Physics. ,vol. 35, pp. 3066- 3067 ,(1964) , 10.1063/1.1713179
D. J. D. Thomas, Surface Damage and Copper Precipitation in Silicon Physica Status Solidi B-basic Solid State Physics. ,vol. 3, pp. 2261- 2273 ,(1963) , 10.1002/PSSB.19630031208
C. M. Hsieh, D. M. Maher, Nucleation and growth of stacking faults in epitaxial silicon during thermal oxidation Journal of Applied Physics. ,vol. 44, pp. 1302- 1306 ,(1973) , 10.1063/1.1662344
Yoshimitsu Sugita, X-Ray Observations of Defect Structures in Silicon Crystals Japanese Journal of Applied Physics. ,vol. 4, pp. 962- 972 ,(1965) , 10.1143/JJAP.4.962
K. V. Ravi, C. J. Varker, Oxidation‐induced stacking faults in silicon. I. Nucleation phenomenon Journal of Applied Physics. ,vol. 45, pp. 263- 271 ,(1974) , 10.1063/1.1662971
F.A. Huntley, A.F.W. Willoughby, Surface diffusion of gold on silicon Solid-State Electronics. ,vol. 14, pp. 641- 642 ,(1971) , 10.1016/0038-1101(71)90140-7
S. Prussin, Generation of Stacking Faults and Prismatic Dislocation Loops in Device‐Processed Silicon Wafers Journal of Applied Physics. ,vol. 43, pp. 2850- 2856 ,(1972) , 10.1063/1.1661605