Two-dimensional defects in silicon after annealing in wet oxygen
作者： G. R. Booker , R. Stickler
DOI: 10.1080/14786436508224937
关键词: Annealing (metallurgy) 、 Wafer 、 Oxide 、 Composite material 、 Amorphous solid 、 Silicon 、 Metallurgy 、 Materials science 、 Oxygen
摘要: Abstract After a silicon slice with mechanically damaged surface was annealed at 1200°C for 2 hours in wet oxygen, two-dimensional defects were present extending from the into slice. The are shown to be thin plates of amorphous material, probably oxide, and it is suggested that they arise by mechanism analogous described Silcock Tunstall (1964) precipitation NbC steel.
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