Method of forming metal lines of semiconductor device
作者： Suk Joong Kim
DOI:
关键词: Layer (electronics) 、 Thermal treatment 、 Semiconductor device 、 Engineering drawing 、 Conductive materials 、 Etching 、 Optoelectronics 、 Materials science 、 Metal
摘要: A method of forming metal lines a semiconductor device includes an etch stop layer over substrate which underlying structures are formed, insulating the layer, etching and to form trenches through exposed, shrinking by using thermal treatment process in order widen openings trenches, filling with conductive material.
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Ming-Chung Liang, Chii-Ping Chen, Integrated circuits and methods for forming the integrated circuits ,(2010)
Cho Jik Ho, Ryu Gon Sik, Method for forming metal line of semiconductor device ,(2004)