Semiconductor memory device, memory system including the same and method of manufacturing the same
作者： Jae Jung Lee
DOI:
关键词:
摘要: A semiconductor memory device of the present invention includes a first dielectric layer located on an upper surface substrate including contact area and non-contact area, etching stop pattern formed to expose in cover hole extended through layer, plug hole, conductive line connected plug.
lens.org 参考文章(14)
Jae-Ho Min, Myeong-cheol Kim, Young-Ju Park, Methods of forming fine patterns in integrated circuit devices and methods of manufacturing integrated circuit devices including the same ,(2011)
Chih-Hao Hsieh, Yung-Shih Cheng, Tzu-Hao Huang, Hsiang-Lin Chen, Chung-Yi Lin, Jiing-Feng Yang, Ko-Bin Kao, Dian-Hau Chen, Methods of patterning small via pitch dimensions ,(2012)
Wen Yu, Connie Pin-Chin Wang, Fei Wang, Shenqing Fang, Memory device interconnects and method of manufacturing ,(2008)
Bart van Schravendijk, Christian Denisse, UV treatment of etch stop and hard mask films for selectivity and hermeticity enhancement ,(2007)
Suk Joong Kim, Method of forming metal lines of semiconductor device ,(2010)
Yoonkyung Choi, Myoungsoo Kim, Eun Young Lee, Sungil Jo, Semiconductor devices and methods of fabricating the same ,(2014)
Min Chul Gil, Method for manufacturing NAND flash device ,(2005)
Seong-Soon Cho, Keon-Soo Kim, Sang-youn Jo, Jeong-Hyuk Choi, NAND-type flash memory devices and fabrication methods thereof ,(2006)
Harry J. Levinson, Chih Yuh Yang, Christopher F. Lyons, Khanh B. Nguyen, Fei Wang, Scott A. Bell, Thin resist with nitride hard mask for gate etch application ,(1998)
Gil Min Chul, METHOD OF FORMING A BIT LINE IN A NAND FLASH MEMORY DEVICE ,(2006)