NAND-type flash memory devices and fabrication methods thereof
作者： Seong-Soon Cho , Keon-Soo Kim , Sang-youn Jo , Jeong-Hyuk Choi
DOI:
关键词:
摘要: In an embodiment, a memory device includes semiconductor substrate having cell active regions and peripheral region. Plugs, including bit line contact plugs, common source line, gate interconnection plug, metal plugs are formed of the same conductive layer through process. Also, interconnections lines, interconnection, directly connected to may be Accordingly, structure such as is simplified thus process their formation simplified.
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