Cell array region of a NOR-type mask ROM device and fabricating method therefor
作者： Woon-kyung Lee
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摘要: In a cell array region of NOR-type mask ROM device and fabricating method therefor, following formation plurality word lines parallel to one another on semiconductor substrate, sub-bit intersecting the top portion at right angles are formed. Trench regions formed substrate exposed by lines. An interlayer insulating layer is entire surface resulting material, bit which layer.
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