Methods of forming fine patterns in integrated circuit devices and methods of manufacturing integrated circuit devices including the same

摘要: A method of fabricating an integrated circuit device includes forming first and second preliminary mask structures on a hard layer in respective regions the substrate. Spacers are formed opposing sidewalls structures, structure is selectively removed from between spacers region. The etched using as to define pattern including sidewall with void therebetween region An insulation patterned patterns masks trench having greater width than trench, conductive trenches.