Methods of forming fine patterns in semiconductor devices
作者： Jae-Ho Min , O-Ik Kwon , Myeong-cheol Kim , Bum-soo Kim , Dong-chan Kim
DOI:
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摘要: Methods of forming a semiconductor device may include providing feature layer having first region and second region. The methods also dual mask on the layer. further variable additionally structure in by patterning spacer sidewall structure. removing while maintaining at least portion
google.de 参考文章(57)
Hiromitsu Mashita, Ayako Nakano, Toshiya Kotani, Tadahito Fujisawa, Atsushi Maesono, Semiconductor device, method for making pattern layout, method for making mask pattern, method for making layout, method for manufacturing photo mask, photo mask, and method for manufacturing semiconductor device ,(2005)
Jae Chang Jung, Method for forming a fine pattern of a semiconductor device ,(2007)
Jung-Dal Choi, Jong-Sun Sel, Hong-Soo Kim, Integrated circuit layout and a semiconductor device manufactured using the same ,(2003)
Wook-Hyoung Lee, Semiconductor device including source strapping line ,(2006)
Nobuyasu Nishiyama, Semiconductor device and a manufacturing method thereof ,(2010)
Woo Yung Jung, Method of forming micro pattern of semiconductor device ,(2007)
Jhon-Jhy Liaw, Memory Array Structure With Strapping Cells ,(2010)
Hong-bae Moon, Method of forming a pattern for a semiconductor device ,(2001)
Pierluigi Crotti, Nadia Iazzi, A process for excavating trenches with a rounded bottom in a silicon substrate for making trench isolation structures ,(1989)
Han-soo Kim, Kwang-Shik Shin, Sung-Hoi Hur, EEPROM device having selecting transistors and method of fabricating the same ,(2006)